BUJ106A_15 datasheet(3/9 Pages) PHILIPS

Part #	BUJ106A

Description	Silicon Diffused Power Transistor

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

3 / 9 page

NXP Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ106A

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES,ICBO

Collector cut-off current

1

V

BE = 0 V; VCE = VCESMmax

-

0.2

mA

I

CES

V

BE = 0 V; VCE = VCESMmax;

-

0.5

mA

T

j = 125 ˚C

I

CEO

Collector cut-off current

V

CEO = VCEOMmax (400V)

-

0.1

mA

I

EBO

Emitter cut-off current

V

EB = 9 V; IC = 0 A

-

1

mA

V

CEOsust

Collector-emitter sustaining voltage

I

B = 0 A; IC = 10 mA;

400

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

C = 6.0 A;IB = 1.2 A

-

0.4

1.0

V

BEsat

Base-emitter saturation voltage

I

C = 6.0 A;IB = 1.2 A

-

1.0

1.5

V

h

FE

DC current gain

I

C = 5 mA; VCE = 5 V

10

17

32

h

FE

I

C = 500 mA; VCE = 5 V

14

21

33

h

FEsat

I

C = 6.0 A; VCE = 5 V

8

11

15

DYNAMIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (resistive load)

I

Con = 5 A; IBon = -IBoff = 1 A;

R

L = 75 ohms; VBB2 = 4 V;

t

on

Turn-on time

0.56

0.75

µs

t

s

Turn-off storage time

2.2

3.3

µs

t

f

Turn-off fall time

260

350

ns

Switching times (inductive load)

I

Con = 5 A; IBon = 1 A; LB = 1 µH;

-V

BB = 5 V

t

s

Turn-off storage time

1.35

1.60

µs

t

f

Turn-off fall time

20

50

ns

Switching times (inductive load)

I

Con = 5A; IBon = 1 A; LB = 1 µH;

-V

BB = 5 V; Tj = 100 ˚C

t

s

Turn-off storage time

-

3.2

µs

t

f

Turn-off fall time

-

100

ns

1 Measured with half sine-wave voltage (curve tracer).

March 1999

2

Rev 2.000

Similar Part No. - BUJ106A_15

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BUJ106AX	63Kb / 7P	Silicon Diffused Power Transistor March 1999 Rev 2.000

More results

Similar Description - BUJ106A_15

Manufacturer	Part #	Datasheet	Description
Wing Shing Computer Com...	2SD1577	138Kb / 1P	Silicon Diffused Power Transistor
NXP Semiconductors	BU2508DF	71Kb / 7P	Silicon Diffused Power Transistor July 1998-Rev 1.600
Wing Shing Computer Com...	S2005A	95Kb / 1P	SILICON DIFFUSED POWER TRANSISTOR
NXP Semiconductors	BU2522DX	80Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.200
	BU2523DX	69Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.200
	BU2525AW	74Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.100
	BU2525DF	71Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.200
	BU2527AF	70Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.200
	BU2527DF	81Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.200
	BU2527DX	83Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.200
	BU2530AL	65Kb / 6P	Silicon Diffused Power Transistor September 1997 Rev 1.200

More results

BUJ106A Datasheet(PDF) 3 Page - NXP Semiconductors

BUJ106A Datasheet(HTML) 3 Page - NXP Semiconductors

Similar Part No. - BUJ106A_15

Similar Description - BUJ106A_15

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL