BUJ302AX

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Product data sheet

Rev. 02 — 28 March 2011

6 of 13

NXP Semiconductors

BUJ302AX

NPN power transistor

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

collector-emitter cut-off

current

-

0.2

10

µA

collector-emitter cut-off

current

-

10

250

µA

open-collector emitter-base

breakdown voltage

1519-

V

collector-emitter sustaining

voltage

400

470

-

V

collector-emitter saturation

voltage

see Figure 8; see Figure 9

-

0.15

0.5

V

see Figure 8; see Figure 9

-0.6

1.5

V

base-emitter saturation

voltage

see Figure 10

-1.1

1.5

V

DC current gain

see Figure 11

48

66

100

see Figure 12

25

42

50

Dynamic characteristics

storage time

see Figure 13; see Figure 14

--3.5

µs

fall time

-

-

500

ns

Fig 6.

Test circuit for collector-emitter sustaining

voltage

Fig 7.

Oscilloscope display for collector-emitter

sustaining voltage test waveform

001aab987

horizontal

1

Ω

300

Ω

6 V

vertical

oscilloscope

50 V

100

Ω to 200 Ω

30 Hz to 60 Hz

001aab988

min

(mA)

10

100

250

0