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ENA1100A Datasheet(PDF) 2 Page - ON Semiconductor

Part # ENA1100A
Description  RF Transistor 8V, 50mA, fT=1.5GHz, NPN Single MCP
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ENA1100A Datasheet(HTML) 2 Page - ON Semiconductor

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15GN01MA
No. A1100-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=10V, IE=0A
0.5
μA
Emitter Cutoff Current
IEBO
VEB=2V, IC=0A
0.5
μA
DC Current Gain
hFE
VCE=5V, IC=10mA
200
400
Gain-Bandwidth Product
fT
VCE=5V, IC=10mA
1.0
1.5
GHz
Output Capacitance
Cob
VCB=10V, f=1MHz
1.1
1.5
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=20mA, IB=2mA
0.06
0.12
V
Output ON resistance
Ron
IB=3mA, f=10kHz
2.0
Ω
Ordering Information
Device
Package
Shipping
memo
15GN01MA-TL-E
MCP
3,000pcs./reel
Pb Free
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
Base-to-Emitter Voltage, VBE -- V
IT06248
IC -- VBE
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
5
6
7
8
9
10
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
IT06247
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0
5
10
15
20
25
30
35
40
45
50
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
IT06246
IB=0mA
0.05mA
0.10mA
0.15mA
0.20mA
0.25mA
0.30mA
VCE=5V
5
7
100
2
3
hFE -- IC
1.0
23
5
7
23
5
7
10
23
5
7 100
Collector Current, IC -- mA
IT05405
VCE=5V
IB=0μA
5
μA
10
μA
15
μA
20
μA
25
μA
30
μA
35
μA
40
μA
45μA


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