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ENA1108A Datasheet(PDF) 2 Page - ON Semiconductor

Part # ENA1108A
Description  RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single MCP
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ENA1108A Datasheet(HTML) 2 Page - ON Semiconductor

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15GN03MA
No. A1108-2/8
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=10V, IE=0A
0.1
μA
Emitter Cutoff Current
IEBO
VEB=2V, IC=0A
1
μA
DC Current Gain
hFE
VCE=5V, IC=10mA
100
180
Gain-Bandwidth Product
fT
VCE=5V, IC=20mA
1.0
1.5
GHz
Output Capacitance
Cob
VCB=10V, f=1MHz
0.95
1.25
pF
Reverse Transfer Capacitance
Cre
0.65
pF
Forward Transfer Gain
⏐S21e⏐
2
VCE=5V, IC=20mA, f=0.4GHz
10
13
dB
Noise Figure
NF
VCE=3V, IC=2mA, f=0.4GHz
1.6
dB
Ordering Information
Device
Package
Shipping
memo
15GN03MA-TL-E
MCP
3,000pcs./reel
Pb Free
02468
10
0
10
20
30
40
50
60
70
80
90
100
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
IT08096
IB=0mA
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
80
70
60
Base-to-Emitter Voltage, VBE -- V
IT08097
IC -- VBE
5
7
100
2
3
5
7
1.0
2
3
3
hFE -- IC
1.0
23
5
7
10
23
5
7
100
1.0
23
5
7
10
23
5
7
100
Collector Current, IC -- mA
IT08098
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
VCE=5V
f T -- IC
Collector Current, IC -- mA
IT08099
VCE=5V
VCE=5V


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