MJ15023_13 datasheet(2/4 Pages) ONSEMI

Part #	MJ15023

Description	Silicon Power Transistors 16 AMPERES SILICON POWER TRANSISTORS 200 ??250 VOLTS, 250 WATTS

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Manufacturer	ONSEMI [ON Semiconductor]

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MJ15023 (PNP), MJ15025 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 100 mAdc, IB = 0)

MJ15023

MJ15025

VCEO(sus)

200

250

−

Collector Cutoff Current

(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)

MJ15023

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

MJ15025

ICEX

−

250

mAdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

MJ15023

(VCE = 200 Vdc, IB = 0)

MJ15025

ICEO

−

500

mAdc

Emitter Cutoff Current

(VCE = 5 Vdc, IB = 0)

Both

IEBO

−

500

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 0.5 s (non−repetitive))

(VCE = 80 Vdc, t = 0.5 s (non−repetitive))

IS/b

5

2

−

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 4 Vdc)

(IC = 16 Adc, VCE = 4 Vdc)

hFE

15

5

60

−

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat)

−

1.4

4.0

Vdc

Base−Emitter On Voltage

(IC = 8 Adc, VCE = 4 Vdc)

VBE(on)

−

2.2

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

fT

4

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob

−

600

pF

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2%.

100

Figure 1. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

0.2

0.5

10

1 k

20

TC = 25°C

50

250

0.1

0.2

1.0

5.0

50

500

100

10

20

BONDING WIRE LIMITED

THERMAL LIMITATION

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

There are two limitations on the powerhandling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 200

_C; TC is

variable

depending

on

conditions.

At

high

case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

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