MJD243 datasheet(3/8 Pages) ONSEMI

Part #	MJD243

Description	Complementary Silicon Plastic Power Transistors

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MJD243 (NPN), MJD253 (PNP)

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3

25

T, TEMPERATURE (

°C)

0

50

75

100

125

150

15

10

TC

5

20

2.5

0

1.5

1

TA

0.5

2

TC

TA (SURFACE MOUNT)

Figure 1. Power Derating

Figure 2. Active Region Maximum

Safe Operating Area

10

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.01

100

2

5

0.1

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

500

ms

dc

1

1ms

50

20

10

5

2

1

100

ms

0.02

0.05

0.2

0.5

5ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 150

°C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

≤ 150°C. TJ(pk) may be calculated from the data in Figure 3.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

t, TIME (ms)

0.01

0.02

0.05

1

2

5

10

20

50

100

200

0.1

0.5

0.2

1

0.2

0.1

0.05

RqJC(t) = r(t) qJC

RqJC = 10°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0 (SINGLE PULSE)

Figure 3. Thermal Response

0.1

0.02

0.01

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