NJW3281G datasheet(4/7 Pages) ONSEMI

Part #	NJW3281G

Description	Complementary NPN-PNP Silicon Power Bipolar Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NJW3281G (NPN) NJW1302G (PNP)

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TYPICAL CHARACTERISTICS

0.01

0.1

1

0.001

0.01

0.1

1

IB, BASE CURRENT (A)

Figure 7. Saturation Region

TJ = 25°C

IC = 0.1 A

0.5 A

1 A

3 A

5 A

0.01

0.1

1

0.001

0.01

0.1

1

IB, BASE CURRENT (A)

Figure 8. Saturation Region

TJ = 25°C

IC = 0.1 A

0.5 A

1 A

5 A

3 A

PNP NJW1302G

NPN NJW3281G

0.01

0.1

1

0.01

0.1

1

10

100

IC, COLLECTER CURRENT (A)

Figure 9. VCE(sat), Collector−Emitter Saturation

Voltage

IC/IB = 10

−30°C

25°C

125°C

0.01

0.1

1

0.01

0.1

1

10

100

IC, COLLECTER CURRENT (A)

Figure 10. VCE(sat), Collector−Emitter

Saturation Voltage

−30°C

25°C

125°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.1

1

10

100

IC, COLLECTER CURRENT (A)

Figure 11. VBE(on), Base−Emitter Voltage

125°C

−30°C

25°C

IC/IB = 10

VCE = 5 V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.1

1

10

100

IC, COLLECTER CURRENT (A)

Figure 12. VBE(on), Base−Emitter Voltage

VCE = 5 V

125°C

−30°C

25°C

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