Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

NJW1302G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NJW1302G
Description  Complementary NPN-PNP Silicon Power Bipolar Transistors
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NJW1302G Datasheet(HTML) 1 Page - ON Semiconductor

  NJW1302G Datasheet HTML 1Page - ON Semiconductor NJW1302G Datasheet HTML 2Page - ON Semiconductor NJW1302G Datasheet HTML 3Page - ON Semiconductor NJW1302G Datasheet HTML 4Page - ON Semiconductor NJW1302G Datasheet HTML 5Page - ON Semiconductor NJW1302G Datasheet HTML 6Page - ON Semiconductor NJW1302G Datasheet HTML 7Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 7 page
background image
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1
Publication Order Number:
NJW3281/D
NJW3281G (NPN)
NJW1302G (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The NJW3281G and NJW1302G are power transistors for high
power audio, disk head positioners and other linear applications.
Features
Exceptional Safe Operating Area
NPN/PNP Gain Matching within 10% from 50 mA to 5 A
Excellent Gain Linearity
High BVCEO
High Frequency
These Devices are Pb−Free and are RoHS Compliant
Benefits
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth
Applications
High−End Consumer Audio Products
Home Amplifiers
Home Receivers
Professional Audio Amplifiers
Theater and Stadium Sound Systems
Public Address Systems (PAs)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
250
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
250
Vdc
Collector Current
− Continuous
IC
15
Adc
Collector Current
− Peak (Note 1)
ICM
30
Adc
Base Current − Continuous
IB
1.6
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg − 65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.625
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
40
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Device
Package
Shipping
ORDERING INFORMATION
15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS 200 WATTS
http://onsemi.com
NJW1302G
TO−3P
(Pb−Free)
30 Units/Rail
NJW3281G
TO−3P
(Pb−Free)
30 Units/Rail
TO−3P
CASE 340AB
STYLES 1,2,3
xxxx
= 0281 or 0302
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
NJWxxxG
AYWW
MARKING
DIAGRAM
1
2
3
4
12 3
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN


Similar Part No. - NJW1302G

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
NJW1302G ONSEMI-NJW1302G Datasheet
89Kb / 7P
   Complementary NPN-PNP Silicon Power Bipolar Transistors
January, 2008 - Rev. 0
logo
Inchange Semiconductor ...
NJW1302G ISC-NJW1302G Datasheet
303Kb / 2P
   isc Silicon PNP Power Transistors
logo
Thinki Semiconductor Co...
NJW1302G THINKISEMI-NJW1302G Datasheet
4Mb / 6P
   200Watt/-15A/-250V Silicon Planar PNP Type Power Transistor
Rev.13T
More results

Similar Description - NJW1302G

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
MJW3281A ONSEMI-MJW3281A_10 Datasheet
160Kb / 6P
   Complementary NPN-PNP Silicon Power Bipolar Transistors
March, 2010 ??Rev. 4
MJL4281A ONSEMI-MJL4281A Datasheet
55Kb / 6P
   Complementary NPN-PNP Silicon Power Bipolar Transistors
July, 2003 ??Rev. 1
NJW3281G ONSEMI-NJW3281G Datasheet
89Kb / 7P
   Complementary NPN-PNP Silicon Power Bipolar Transistors
January, 2008 - Rev. 0
MJW3281A ONSEMI-MJW3281A Datasheet
91Kb / 8P
   Complementary NPN-PNP Silicon Power Bipolar Transistors
March, 2002 ??Rev. 1
MJL0281A ONSEMI-MJL0281A Datasheet
58Kb / 5P
   Complementary NPN-PNP Power Bipolar Transistors
June, 2006 ??Rev. 1
NJW0281G ONSEMI-NJW0281G_13 Datasheet
108Kb / 5P
   Complementary NPN-PNP Power Bipolar Transistors
September, 2013 ??Rev. 1
MJW0281A ONSEMI-MJW0281A_05 Datasheet
67Kb / 6P
   Complementary NPN-PNP Power Bipolar Transistors
June, 2005 ??Rev. 2
NJW0281G ONSEMI-NJW0281G Datasheet
80Kb / 5P
   Complementary NPN-PNP Power Bipolar Transistors
September, 2013 ??Rev. 1
MJL4281A ONSEMI-MJL4281A_13 Datasheet
102Kb / 5P
   Complementary NPN-PN Silicon Power Bipolar Transistors
June, 2013 ??Rev. 3
MJW0281AG ONSEMI-MJW0281AG Datasheet
63Kb / 6P
   Complementary NPN?뭁NP Power Bipolar Transistors
June, 2005 ??Rev. 2
More results


Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com