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NJW1302G Datasheet(PDF) 1 Page - ON Semiconductor |
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NJW1302G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 1 1 Publication Order Number: NJW3281/D NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications. Features • Exceptional Safe Operating Area • NPN/PNP Gain Matching within 10% from 50 mA to 5 A • Excellent Gain Linearity • High BVCEO • High Frequency • These Devices are Pb−Free and are RoHS Compliant Benefits • Reliable Performance at Higher Powers • Symmetrical Characteristics in Complementary Configurations • Accurate Reproduction of Input Signal • Greater Dynamic Range • High Amplifier Bandwidth Applications • High−End Consumer Audio Products ♦ Home Amplifiers ♦ Home Receivers • Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 250 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 250 Vdc Collector Current − Continuous IC 15 Adc Collector Current − Peak (Note 1) ICM 30 Adc Base Current − Continuous IB 1.6 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.625 °C/W Thermal Resistance, Junction−to−Ambient RqJA 40 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. Device Package Shipping ORDERING INFORMATION 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS http://onsemi.com NJW1302G TO−3P (Pb−Free) 30 Units/Rail NJW3281G TO−3P (Pb−Free) 30 Units/Rail TO−3P CASE 340AB STYLES 1,2,3 xxxx = 0281 or 0302 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week NJWxxxG AYWW MARKING DIAGRAM 1 2 3 4 12 3 1 BASE EMITTER 3 COLLECTOR 2, 4 1 BASE EMITTER 3 COLLECTOR 2, 4 PNP NPN |
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