PBR941_15 datasheet(4/16 Pages) PHILIPS

Part #	PBR941

Description	UHF wideband transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 16 page

1998 Aug 10

4

Philips Semiconductors

Product speciﬁcation

UHF wideband transistor

PBR941

CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming s12 is zero.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC characteristics

V(BR)CBO

collector-base breakdown voltage

IC = 100 µA; IE =0

20

−−

V

V(BR)CEO

collector-emitter breakdown voltage IC = 100 µA; IB =0

10

−−

V

V(BR)EBO

emitter-base breakdown voltage

IE =10 µA; IC = 0

1.5

−−

V

ICBO

collector-base leakage current

VCB =10V; IE =0

−−

100

nA

IEBO

emitter-base leakage current

VEB =1V; IC =0

−−

100

nA

hFE

DC current gain

IC = 5 mA; VCE = 6 V

50

100

200

IC = 15 mA; VCE =6V

−

100

−

AC characteristics

Cre

feedback capacitance

IC = 0; VCB = 6 V; f = 1 MHz

−

0.3

−

pF

fT

transition frequency

IC = 15 mA; VCE = 6 V; f = 1 GHz

−

8

−

GHz

GUM

maximum unilateral power gain;

note 1

IC = 15 mA; VCE =6V;

Tamb =25 °C; f = 1 GHz

−

15

−

dB

IC = 15 mA; VCE =6V;

Tamb =25 °C; f = 2 GHz

−

9.5

−

dB

F

noise ﬁgure

Γ

S = Γopt; IC = 5 mA; VCE =6V;

f = 1 GHz

−

1.4

−

dB

Γ

S = Γopt; IC = 5 mA; VCE =6V;

f = 2 GHz

−

2

−

dB

G

UM

10

S

21

2

1S

11

2

–

() 1S

22

2

–

()

-------------------------------------------------------------- dB

log

=

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