PBSS4032SPN

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Product data sheet

Rev. 2 — 14 October 2010

3 of 20

NXP Semiconductors

PBSS4032SPN

5.

Limiting values

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

[3]

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1 (NPN)

collector current

-

5.7

A

TR2 (PNP)

collector current

-

−4.8

A

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

-

30

V

collector-emitter voltage

open base

-

30

V

emitter-base voltage

open collector

-

5

V

peak collector current

≤ 1ms

-

10

A

base current

-

1

A

total power dissipation

≤ 25 °C

[1] -0.73

W

[2] -1

W

[3] -1.7

W

Per device

total power dissipation

≤ 25 °C

[1] -0.86

W

[2] -1.4

W

[3] -2.3

W

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C