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PBSS4041PT Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PBSS4041PT
Description  60 V, 2.7 A PNP low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS4041PT Datasheet(HTML) 2 Page - NXP Semiconductors

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PBSS4041PT_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 9 March 2010
2 of 15
NXP Semiconductors
PBSS4041PT
60 V, 2.7 A PNP low VCEsat (BISS) transistor
2.
Pinning information
3.
Ordering information
4.
Marking
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5.
Limiting values
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1base
2emitter
3
collector
12
3
sym013
3
2
1
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS4041PT
-
plastic surface-mounted package; 3 leads
SOT23
Table 4.
Marking codes
Type number
Marking code[1]
PBSS4041PT
*BL
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−60
V
VCEO
collector-emitter voltage
open base
-
−60
V
VEBO
emitter-base voltage
open collector
-
−5V
IC
collector current
-
−2.7
A
ICM
peak collector current
single pulse;
tp ≤ 1ms
-
−8A
IB
base current
-
−1A


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