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PBSS4041PT Datasheet(PDF) 2 Page - NXP Semiconductors |
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PBSS4041PT Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 15 page PBSS4041PT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 9 March 2010 2 of 15 NXP Semiconductors PBSS4041PT 60 V, 2.7 A PNP low VCEsat (BISS) transistor 2. Pinning information 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 2emitter 3 collector 12 3 sym013 3 2 1 Table 3. Ordering information Type number Package Name Description Version PBSS4041PT - plastic surface-mounted package; 3 leads SOT23 Table 4. Marking codes Type number Marking code[1] PBSS4041PT *BL Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −60 V VCEO collector-emitter voltage open base - −60 V VEBO emitter-base voltage open collector - −5V IC collector current - −2.7 A ICM peak collector current single pulse; tp ≤ 1ms - −8A IB base current - −1A |
Similar Part No. - PBSS4041PT_15 |
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Similar Description - PBSS4041PT_15 |
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