NXP Semiconductors

PBSS4130PAN

30 V, 1 A NPN/NPN low VCEsat (BISS) transistor

PBSS4130PAN

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2013. All rights reserved

Product data sheet

11 January 2013

10 / 17

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

-

-

1

V

-

-

1.1

V

base-emitter saturation

voltage

-

-

1.1

V

base-emitter turn-on

voltage

-

-

0.9

V

delay time

-

15

-

ns

rise time

-

30

-

ns

turn-on time

-

45

-

ns

storage time

-

310

-

ns

fall time

-

55

-

ns

turn-off time

-

365

-

ns

transition frequency

90

165

-

MHz

collector capacitance

-

7.5

10

pF

006aad172

200

400

600

0

1

10

(1)

(2)

(3)

Fig. 10. DC current gain as a function of collector

current; typical values

0

5

4

2

3

1

006aad173

0.8

1.2

0.4

1.6

2.0

(A)

0

9

8

7

6

5

4

3

2

1

Fig. 11. Collector current as a function of collector-

emitter voltage; typical values