IRFHM4231TRPbF

4

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June 5, 2014

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

Tc = 25°C

Tj = 150°C

Single Pulse

10msec

1msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

DC

Limited by package

Fig 8. Maximum Safe Operating Area

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

TJ = 25°C

TJ = 150°C

VGS = 0V

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 9. Maximum Drain Current vs. Case Temperature

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.6

1.0

1.4

1.8

2.2

ID = 25µA

ID = 250µA

ID = 1.0mA

ID = 1.0mA

Fig 10. Drain-to-Source Breakdown Voltage

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

25

50

75

100

125

150

TC , Case Temperature (°C)

0

20

40

60

80

Limited by package