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IRFHM8334PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFHM8334PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRFHM8334TRPbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 D S G Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case e ––– 4.5 RθJC (Top) Junction-to-Case e ––– 44 °C/W RθJA Junction-to-Ambient f ––– 47 RθJA (<10s) Junction-to-Ambient f ––– 30 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.2 9.0 ––– 11.2 13.5 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 25μA ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 44 ––– ––– S Qg Total Gate Charge ––– 15 ––– nC Qg Total Gate Charge ––– 7.1 11 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.5 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.0 ––– Qgd Gate-to-Drain Charge ––– 2.3 ––– Qgodr Gate Charge Overdrive ––– 1.3 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 3.3 ––– Qoss Output Charge ––– 5.7 ––– nC RG Gate Resistance ––– 1.2 ––– Ω td(on) Turn-On Delay Time ––– 8.3 ––– tr Rise Time ––– 14 ––– td(off) Turn-Off Delay Time ––– 7.0 ––– tf Fall Time ––– 4.6 ––– Ciss Input Capacitance ––– 1180 ––– Coss Output Capacitance ––– 260 ––– Crss Reverse Transfer Capacitance ––– 110 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 13 20 ns Qrr Reverse Recovery Charge ––– 19 29 nC Typ. RG=1.8 Ω VDS = 10V, ID = 20A VDS = 24V, VGS = 0V, TJ = 125°C m Ω ID = 20A ID = 20A ƒ = 1.0MHz VDD = 30V, VGS = 4.5V VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 380 A/μs dà TJ = 25°C, IS = 20A, VGS = 0V d showing the integral reverse p-n junction diode. VDS = 10V Conditions Max. 35 Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 20A d VDS = 24V, VGS = 0V VDS = 16V, VGS = 0V VGS = 4.5V, ID = 16A d VGS = 4.5V VGS = 10V, VDS = 15V, ID = 20A ––– ––– 176 ––– ––– 25 h MOSFET symbol nA ns A pF nC VDS = 15V VGS = 20V VGS = -20V |
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