NXP Semiconductors

BUJ303CD

NPN power transistor

BUJ303CD

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Product data sheet

8 November 2012

8 / 13

003aag652

(V)

10

1

0.6

0.8

0.2

0.4

1.0

1.2

1.4

0

Fig. 11. Base-emitter saturation voltage as a function of

collector current; typical values

003aag653

10

1

10

1

Fig. 12. DC current gain as a function of collector

current; typical values

001aab989

0

DUT

T

Fig. 13. Test circuit for resistive load switching

001aab990

10 %

10 %

90 %

90 %

t

t

Fig. 14. Switching times waveforms for resistive load