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IRFHM8363PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFHM8363PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFHM8363PbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 6, 2014 D S G Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case f ––– 6.7 RθJC (Top) Junction-to-Case f ––– 72 °C/W RθJA Junction-to-Ambient g ––– 47 RθJA (<10s) Junction-to-Ambient g ––– 32 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 12.2 14.9 ––– 16.3 20.4 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.3 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 20 ––– ––– S Qg Total Gate Charge ––– 15 ––– nC Qg Total Gate Charge ––– 6.7 ––– Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.1 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.0 ––– Qgd Gate-to-Drain Charge ––– 2.0 ––– Qgodr Gate Charge Overdrive ––– 1.6 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 3.0 ––– Qoss Output Charge ––– 7.6 ––– nC RG Gate Resistance ––– 1.6 ––– Ω td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 94 ––– td(off) Turn-Off Delay Time ––– 12 ––– tf Fall Time ––– 33 ––– Ciss Input Capacitance ––– 1165 ––– Coss Output Capacitance ––– 260 ––– Crss Reverse Transfer Capacitance ––– 100 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 17 26 ns Qrr Reverse Recovery Charge ––– 24 36 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VDS = VGS, ID = 25µA µA VGS = 4.5V, ID = 8.0A e VGS = 4.5V VDS = 24V, VGS = 0V, TJ = 125°C m Ω VDS = 24V, VGS = 0V VGS = 10V, VDS = 15V, ID = 10A Typ. ––– RG=1.8Ω VDS = 10V, ID = 10A ID = 10A ID = 10A VGS = 0V VDS = 10V VDS = 24V, VGS = 0V VDD = 15V, VGS = 4.5V TJ = 25°C, IF = 10A, VDD = 15V di/dt = 280A/µs eà TJ = 25°C, IS = 10A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions Max. 29 10 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 10A e ––– ––– 116 ––– ––– 10 i MOSFET symbol nA ns A pF nC VDS = 15V ––– VGS = 20V VGS = -20V |
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