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IRFHS8342PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFHS8342PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 9 page HEXFET® Power MOSFET Notes through
are on page 2 Features and Benefits Applications • Control MOSFET for Buck Converters • System/Load Switch Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom)= 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation f PD @TA = 70°C Power Dissipation f Linear Derating Factor f W/°C TJ Operating Junction and TSTG Storage Temperature Range V W A °C Max. 8.8 d 15 d 76 ±20 30 7.1 19 d 8.5 d -55 to + 150 2.1 0.02 1.3 2mm x 2mm PQFN G D D S D D S G 3 S D2 D1 4S 5D 6D TOP VIEW D D VDS 30 V VGS max ±20 V RDS(on) max (@VGS = 10V) 16.0 m Ω Qg(typical) (@VGS = 4.5V) 4.2 nC ID (@Tc(Bottom) = 25°C) 8.5 d A IRFHS8342PbF Form Quantity IRFHS8342TRPbF PQFN 2mm x 2mm Tape and Reel 4000 IRFHS8342TR2PbF PQFN 2mm x 2mm Tape and Reel 400 EOL notice # 259 Orderable part number Package Type Standard Pack Note 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 Features Resulting Benefits Low RDSon ( ≤ 16.0mΩ) Lower Conduction Losses Low Thermal Resistance to PCB (≤ 13°C/W) Enable better thermal dissipation Low Profile ( ≤ 1.0 mm) results in Increased Power Density Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability |
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