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BC848BWT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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BC848BWT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 13 page © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 12 1 Publication Order Number: BC846AWT1/D BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BC846 BC847 BC848 VCEO 65 45 30 V Collector-Base Voltage BC846 BC847 BC848 VCBO 80 50 30 V Emitter-Base Voltage BC846 BC847 BC848 VEBO 6.0 6.0 5.0 V Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C PD 200 mW Thermal Resistance, Junction−to−Ambient RqJA 620 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C 1. FR−5 = 1.0 x 0.75 x 0.062 in. www.onsemi.com SC−70/SOT−323 CASE 419 STYLE 3 MARKING DIAGRAM XX = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) XX M G G COLLECTOR 3 1 BASE 2 EMITTER 1 2 3 See detailed ordering, marking and shipping information in the package dimensions section on page 12 of this data sheet. ORDERING INFORMATION |
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