CPH5901

No.8278-2/8

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

[FET]

Gate-to-Drain Breakdown Voltage

V(BR)GDS

IG=--10μA, VGS=0V

--15

V

Gate Cutoff Current

IGSS

VGS=--10V, VDS=0V

--1.0

nA

Cutoff Voltage

VGS(off)

VDS=5V, ID=100μA

--0.2

--0.6

--1.4

V

Drain Current

IDSS

VDS=5V, VGS=0V

6.0*

20.0*

mA

Forward Transfer Admittance

| yfs |

VDS=5V, VGS=0V, f=1kHz

25

50

mS

Input Capacitance

Ciss

VDS=5V, VGS=0V, f=1kHz

10

pF

Reverse Transfer Capacitance

Crss

VDS=5V, VGS=0V, f=1kHzz

3.0

pF

Noise Figure

NF

VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz

1.5

dB

[TR]

Collector Cutoff Current

ICBO

VCB=35V, IE=0A

0.1

μA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

0.1

μA

DC Current Gain

hFE

VCE=6V, IC=1mA

135

400

Gain-Bandwidth Product

fT

VCE=6V, IC=10mA

200

MHz

Output Capacitance

Cob

VCB=6V, f=1MHz

1.7

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=50mA, IB=5mA

0.08

0.4

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=50mA, IB=5mA

0.8

1.0

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10μA, IE=0A

55

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10μA, IC=0A

6

V

Turn-On Time

ton

See specified Test Circuit.

0.15

ns

Storage Time

tstg

0.75

ns

Fall Time

tf

0.20

ns

* : The CPH5901 is classified by IDSS as follows : (unit : mA)

Rank

F

G

IDSS

6.0 to 12.0

10.0 to 20.0

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

CPH5901F-TL-E

CPH5

3,000pcs./reel

Pb Free

CPH5901G-TL-E

CPH5

3,000pcs./reel

+

+

50Ω

INPUT

OUTPUT

VR

RB

VCC=20V

220μF

470μF

VBE= --5V

PW=20μs

IB1

IB2

D.C.≤1%

10IB1= --10IB2= IC=10mA

RL