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PBSS5160DS Datasheet(PDF) 8 Page - NXP Semiconductors |
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PBSS5160DS Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page PBSS5160DS_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 9 October 2008 8 of 14 NXP Semiconductors PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values 006aaa489 IC (mA) −10−1 −104 −103 −1 −102 −10 −10−1 −1 VCEsat (V) −10−2 (3) (2) (1) 006aaa490 IC (mA) −10−1 −104 −103 −1 −102 −10 −10−1 −1 VCEsat (V) −10−2 (3) (2) (1) 006aaa491 IC (mA) −10−1 −104 −103 −1 −102 −10 1 10 102 103 RCEsat ( Ω) 10−1 (3) (2) (1) 006aaa492 IC (mA) −10−1 −104 −103 −1 −102 −10 1 10 102 103 RCEsat ( Ω) 10−1 (3) (2) (1) |
Similar Part No. - PBSS5160DS_15 |
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Similar Description - PBSS5160DS_15 |
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