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PBSS5160DS Datasheet(PDF) 8 Page - NXP Semiconductors

Part # PBSS5160DS
Description  60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS5160DS Datasheet(HTML) 8 Page - NXP Semiconductors

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PBSS5160DS_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 9 October 2008
8 of 14
NXP Semiconductors
PBSS5160DS
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
IC/IB =20
(1) Tamb = 100 °C
(2) Tamb =25 °C
(3) Tamb = −55 °C
Tamb =25 °C
(1) IC/IB = 100
(2) IC/IB =50
(3) IC/IB =10
Fig 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
IC/IB =20
(1) Tamb = 100 °C
(2) Tamb =25 °C
(3) Tamb = −55 °C
Tamb =25 °C
(1) IC/IB = 100
(2) IC/IB =50
(3) IC/IB =10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa489
IC (mA)
−10−1
−104
−103
−1
−102
−10
−10−1
−1
VCEsat
(V)
−10−2
(3)
(2)
(1)
006aaa490
IC (mA)
−10−1
−104
−103
−1
−102
−10
−10−1
−1
VCEsat
(V)
−10−2
(3)
(2)
(1)
006aaa491
IC (mA)
−10−1
−104
−103
−1
−102
−10
1
10
102
103
RCEsat
(
Ω)
10−1
(3)
(2)
(1)
006aaa492
IC (mA)
−10−1
−104
−103
−1
−102
−10
1
10
102
103
RCEsat
(
Ω)
10−1
(3)
(2)
(1)


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