PBSS5160U_15 datasheet(7/14 Pages) PHILIPS

Part #	PBSS5160U

Description	60 V, 1 A PNP low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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7 / 14 page

PBSS5160U_4

Product data sheet

Rev. 04 — 2 October 2008

7 of 14

NXP Semiconductors

PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

VCE = −5V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 5.

DC current gain as a function of collector

current; typical values

Fig 6.

Collector current as a function of

collector-emitter voltage; typical values

VCE = −5V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

Base-emitter voltage as a function of collector

current; typical values

Fig 8.

Base-emitter saturation voltage as a function

of collector current; typical values

006aaa474

200

400

600

hFE

0

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

006aaa478

VCE (V)

0

−5

−3

−1

−2

−4

−0.8

−1.2

−0.4

−1.6

−2.0

IC

(A)

0.0

IB (mA) = −35.0

−31.5

−28.0

−24.5

−21.0

−17.5

−14.0

−10.5

−7.0

−3.5

006aaa476

−0.6

−0.4

−0.8

−1.0

VBE

(V)

−0.2

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

006aaa477

−0.5

−0.7

−0.3

−0.9

−1.1

VBEsat

(V)

−0.1

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

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