NXP Semiconductors

PBSS5240X

40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X

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Product data sheet

19 October 2012

3 / 12

Symbol

Parameter

Conditions

Min

Max

Unit

[3]

-

1.35

W

junction temperature

-

150

°C

ambient temperature

-65

150

°C

storage temperature

-65

150

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

-75

175

125

25

75

-25

006aac675

0.5

1.0

1.5

(W)

0.0

(1)

(2)

(3)

(3) FR4 PCB, standard footprint

Fig. 1. Power derating curves

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

-

250

K/W

[2]

-

-

132

K/W

thermal resistance

from junction to

ambient

in free air

[3]

-

-

93

K/W

thermal resistance

from junction to solder

point

-

-

16

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.