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PBSS5240Y Datasheet(PDF) 3 Page - NXP Semiconductors

Part # PBSS5240Y
Description  40 V low VCEsat PNP transistor
Download  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS5240Y Datasheet(HTML) 3 Page - NXP Semiconductors

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2002 Feb 28
3
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2.
Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes
1.
Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2.
Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−40
V
VCEO
collector-emitter voltage
open base
−40
V
VEBO
emitter-base voltage
open collector
−5
V
IC
collector current (DC)
−2
A
ICM
peak collector current
−3
A
IBM
peak base current
−300
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
270
mW
Tamb ≤ 25 °C; note 2
430
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
463
K/W
note 2
291
K/W


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