2003 Oct 09

3

NXP Semiconductors

Product data sheet

50 V, 2 A

PBSS5250T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1.

Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.

2.

THERMAL CHARACTERISTICS

Notes

1.

Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.

2.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

−50

V

collector-emitter voltage

open base

−

−50

V

emitter-base voltage

open collector

−

−5

V

collector current (DC)

−

−2

A

peak collector current

single peak

−

−3

A

base current (DC)

−

−300

mA

total power dissipation

300

mW

−

480

mW

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air; note 1

417

K/W

in free air; note 2

260

K/W