PBSS4240X_15 datasheet(6/12 Pages) PHILIPS

Part #	PBSS4240X

Description	40 V, 2 A NPN low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

PBSS4240X

40 V, 2 A NPN low VCEsat (BISS) transistor

PBSS4240X

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Product data sheet

15 October 2012

6 / 12

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBEsat

base-emitter saturation

voltage

IC = 1 A; IB = 100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

1.2

V

VBEon

base-emitter turn-on

voltage

VCE = 5 V; IC = 1 A; pulsed; tp ≤ 300 µs;

δ ≤ 0.02 ; Tamb = 25 °C

-

1.1

V

fT

transition frequency

VCE = 10 V; IC = 50 mA; f = 100 MHz;

Tamb = 25 °C

150

-

MHz

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

10

pF

006aad159

400

800

1200

hFE

0

IC (mA)

1

104

103

10

102

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 5. DC current gain as a function of collector

current; typical values

VCE (V)

0

5

4

2

3

1

006aad160

0.8

1.2

0.4

1.6

2.0

IC

(A)

0

IB = 15 mA 12

9

6

4.5

3

1.5

Tamb = 25 °C

Fig. 6. Collector current as a function of collector-

emitter voltage; typical values

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