EMG2DXV5T5G datasheet(2/7 Pages) ONSEMI

Part #	EMG2DXV5T5G

Description	Dual Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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EMG2DXV5, EMG5DXV5

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DEVICE MARKING AND RESISTOR VALUES

Device

Package

Marking

R1 (K)

R2 (K)

EMG2DXV5

SOT−553

UP

47

EMG5DXV5

SOT−553

UF

10

47

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (Q1 & Q2)

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) EMG2DXV5

EMG5DXV5

IEBO

−

0.1

0.2

mAdc

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector-Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS (Q1 & Q2) (Note 3)

DC Current Gain (VCE = 10 V, IC = 5.0 mA)

EMG2DXV5

EMG5DXV5

hFE

80

140

−

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

VCE(sat)

−

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

EMG2DXV5

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

EMG5DXV5

VOL

−

0.2

Vdc

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

EMG2DXV5

EMG5DXV5

R1

32.9

7.0

47

10

61.1

13

kW

Resistor Ratio

EMG2DXV5

EMG5DXV5

R1/R2

0.8

0.17

1.0

0.21

1.2

0.25

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

Figure 1. Derating Curve

350

200

150

100

50

0

−50

0

50

100

150

TA, AMBIENT TEMPERATURE (°C)

RqJA = 370°C/W

250

300

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