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MJD128T4G Datasheet(PDF) 3 Page - ON Semiconductor |
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MJD128T4G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page MJD128T4G, NJVMJD128T4G (PNP) http://onsemi.com 3 IC, COLLECTOR CURRENT (AMP) 500 0.2 5000 2000 10,000 VCE = 4 V TJ = 150C 7000 0.1 0.7 25 C -55 C 3000 0.5 1 20,000 700 1000 23 5 3 IB, BASE CURRENT (mA) 2.6 2.2 1.8 1.4 0.3 0.5 1 7 35 4 A IC = 2 A 2 TJ = 25C 1 IC, COLLECTOR CURRENT (AMP) 2 1.5 3 2.5 1 0.5 TJ = 25C VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V VCE(sat) @ IC/IB = 250 0.2 3 0.1 0.7 0.3 1 5 10 20 30 Figure 2. DC Current Gain Figure 3. Collector Saturation Region Figure 4. “On” Voltages 200 300 0.3 7 10 0.7 0.5 7 2 10 6 A TYPICAL ELECTRICAL CHARACTERISTICS IC, COLLECTOR CURRENT (AMP) 0.2 *IC/IB hFE/3 0.1 -55 C to 25C 12 3 10 +5 -5 qVB for VBE 25 C to 150C qVC for VCE(sat) Figure 5. Temperature Coefficients -4 -3 -2 -1 0 +4 +3 +2 +1 0.5 0.3 7 5 -55 C to 25C 25 C to 150C 104 VBE, BASE−EMITTER VOLTAGE (VOLTS) 10-1 0 +0.4 103 102 101 100 -0.2 -0.4 -0.6 TJ = 150C 100 C REVERSE FORWARD 25 C VCE = 30 V 105 +0.6 +0.2 -0.8 -1 -1.2 -1.4 Figure 6. Collector Cut−Off Region Figure 7. Small−Signal Current Gain 1 f, FREQUENCY (kHz) 100 210 500 5000 TC = 25C VCE = 4 Vdc IC = 3 Adc 3000 550 20 100 10,000 200 300 200 500 1000 2000 1000 10 50 20 30 PNP NPN |
Similar Part No. - MJD128T4G_12 |
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Similar Description - MJD128T4G_12 |
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