MUN2231T1G datasheet(4/11 Pages) ONSEMI

Part #	MUN2231T1G

Description	Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3

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4

Table 2. THERMAL CHARACTERISTICS

Characteristic

Unit

Max

Symbol

THERMAL CHARACTERISTICS (SOT−1123) (NSBC123EF3)

Total Device Dissipation

TA = 25°C

(Note 3)

(Note 4)

Derate above 25

°C

(Note 3)

(Note 4)

PD

254

297

2.0

2.4

mW

mW/

°C

Thermal Resistance,

(Note 3)

Junction to Ambient

(Note 4)

RqJA

493

421

°C/W

Thermal Resistance, Junction to Lead

(Note 3)

RqJL

193

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

−

2.3

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 5)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 5)

(IC = 5.0 mA, VCE = 10 V)

hFE

8.0

15

−

Collector−Emitter Saturation Voltage (Note 5)

(IC = 10 mA, IB = 5.0 mA)

VCE(sat)

−

0.25

Vdc

Input Voltage (off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

−

1.2

0.5

Vdc

Input Voltage (on)

(VCE = 0.3 V, IC = 20 mA)

Vi(on)

2.0

1.7

−

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

−

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

R1

1.5

2.2

2.9

k

W

Resistor Ratio

R1/R2

0.8

1.0

1.2

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle

≤ 2%.

Similar Part No. - MUN2231T1G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MUN2231T1G	127Kb / 10P	Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k August, 2012 ??Rev. 0
ON Semiconductor	MUN2231T1G	102Kb / 11P	Digital Transistors (BRT) November, 2016 ??Rev. 4

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