© Semiconductor Components Industries, LLC, 2015

January, 2015 − Rev. 2

1

Publication Order Number:

DTC123E/D

MUN2231, MMUN2231L,

MUN5231, DTC123EE,

DTC123EM3, NSBC123EF3

Digital Transistors (BRT)

R1 = 2.2 kW, R2 = 2.2 kW

NPN Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

Features

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

Compliant

Rating

Symbol

Max

Unit

Collector−Base Voltage

50

Vdc

Collector−Emitter Voltage

50

Vdc

Collector Current − Continuous

100

mAdc

Input Forward Voltage

12

Vdc

Input Reverse Voltage

10

Vdc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 1

BASE

(INPUT)

R1

R2

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

www.onsemi.com

PIN CONNECTIONS

SC−75

CASE 463

STYLE 1

MARKING DIAGRAMS

XXX

= Specific Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

SC−59

CASE 318D

STYLE 1

SOT−23

CASE 318

STYLE 6

SC−70/SOT−323

CASE 419

STYLE 3

SOT−723

CASE 631AA

STYLE 1

SOT−1123

CASE 524AA

STYLE 1

XX M

G

G

1

1

XXX M

G

G

XX M

G

G

1

XX M

1

X M

XX M

1

1