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DTC143ZM3 Datasheet(PDF) 4 Page - ON Semiconductor |
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DTC143ZM3 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 12 page MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 www.onsemi.com 4 Table 2. THERMAL CHARACTERISTICS Characteristic Unit Max Symbol Thermal Characteristics (SOT−1123) (NSBC143ZF3) Total Device Dissipation TA = 25°C (Note 3) (Note 4) Derate above 25 °C (Note 3) (Note 4) PD 254 297 2.0 2.4 mW mW/ °C Thermal Resistance, (Note 3) Junction to Ambient (Note 4) RqJA 493 421 °C/W Thermal Resistance, Junction to Lead (Note 3) RqJL 193 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. FR *4 @ 100 mm2, 1 oz. copper traces, still air. 4. FR *4 @ 500 mm2, 1 oz. copper traces, still air. Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.18 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 5) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS DC Current Gain (Note 5) (IC = 5.0 mA, VCE = 10 V) hFE 80 200 − Collector *Emitter Saturation Voltage (Note 5) (IC = 10 mA, IB = 1.0 mA) VCE(sat) − − 0.25 Vdc Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) − 0.6 0.5 Vdc Input Voltage (on) (VCE = 0.3 V, IC = 5 mA) Vi(on) 1.3 0.9 − Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 3.3 4.7 6.1 k W Resistor Ratio R1/R2 0.08 0.1 0.12 5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%. |
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