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PBSS5350X Datasheet(PDF) 8 Page - NXP Semiconductors

Part # PBSS5350X
Description  PNP low VCEsat (BISS) transistor 50 V, 3 A
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS5350X Datasheet(HTML) 8 Page - NXP Semiconductors

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2004 Nov 04
8
NXP Semiconductors
Product data sheet
50 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5350X
handbook, halfpage
MLE171
0
600
200
400
−10−1
−1
−10
IC (mA)
hFE
−102
−103
−104
(1)
(3)
(2)
Fig.6
DC current gain as a function of collector
current; typical values.
VCE = −2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MLE170
0
−1.2
−0.4
−0.8
−10−1
−1
−10
IC (mA)
VBE
(V)
−102
−103
−104
(1)
(3)
(2)
Fig.7
Base-emitter voltage as a function of
collector current; typical values.
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
MLE173
−1
−10−1
−10−2
−10−3
−10−1
−1
−10
IC (mA)
VCEsat
(V)
−102
−103
−104
(3)
(1)
(2)
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MLE174
−1
−10−1
−10−2
−10−3
−10−1
−1
−10
IC (mA)
VCEsat
(V)
−102
−103
−104
(3)
(1)
(2)
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.


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