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PBSS5350X Datasheet(PDF) 8 Page - NXP Semiconductors |
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PBSS5350X Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page 2004 Nov 04 8 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X handbook, halfpage MLE171 0 600 200 400 −10−1 −1 −10 IC (mA) hFE −102 −103 −104 (1) (3) (2) Fig.6 DC current gain as a function of collector current; typical values. VCE = −2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. handbook, halfpage MLE170 0 −1.2 −0.4 −0.8 −10−1 −1 −10 IC (mA) VBE (V) −102 −103 −104 (1) (3) (2) Fig.7 Base-emitter voltage as a function of collector current; typical values. VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. handbook, halfpage MLE173 −1 −10−1 −10−2 −10−3 −10−1 −1 −10 IC (mA) VCEsat (V) −102 −103 −104 (3) (1) (2) Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. handbook, halfpage MLE174 −1 −10−1 −10−2 −10−3 −10−1 −1 −10 IC (mA) VCEsat (V) −102 −103 −104 (3) (1) (2) Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. |
Similar Part No. - PBSS5350X_15 |
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Similar Description - PBSS5350X_15 |
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