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PBSS5480X Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PBSS5480X
Description  PNP low VCEsat (BISS) transistor 80 V, 4 A
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS5480X Datasheet(HTML) 5 Page - NXP Semiconductors

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2004 Nov 08
5
NXP Semiconductors
Product data sheet
80 V, 4 A
PNP low VCEsat (BISS) transistor
PBSS5480X
THERMAL CHARACTERISTICS
Notes
1.
Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
3.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
5.
Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
notes 1 and 2
50
K/W
note 2
225
K/W
note 3
125
K/W
note 4
90
K/W
note 5
80
K/W
Rth(j-s)
thermal resistance from junction to soldering point
16
K/W
006aaa232
10
1
102
103
Zth
(K/W)
10−1
10−5
10
10−2
10−4
102
10−1
tp (s)
10−3
103
1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
(1)
δ = 1.
(2)
δ = 0.75.
(3)
δ = 0.5.
(4)
δ = 0.33.
(5)
δ = 0.2.
(6)
δ = 0.1.
(7)
δ = 0.05.
(8)
δ = 0.02.
(9)
δ = 0.01.
(10)
δ = 0.
Mounted on FR4 printed-circuit board; standard footprint.


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