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PBSS5560PA Datasheet(PDF) 4 Page - NXP Semiconductors |
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PBSS5560PA Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 15 page PBSS5560PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 21 April 2010 4 of 15 NXP Semiconductors PBSS5560PA 60 V, 5 A PNP low VCEsat (BISS) transistor FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab979 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 006aab980 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 |
Similar Part No. - PBSS5560PA_15 |
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Similar Description - PBSS5560PA_15 |
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