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PBSS8110Y Datasheet(PDF) 3 Page - NXP Semiconductors

Part # PBSS8110Y
Description  100 V, 1 A NPN low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS8110Y Datasheet(HTML) 3 Page - NXP Semiconductors

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PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
3 of 13
NXP Semiconductors
PBSS8110Y
100 V, 1 A NPN low VCEsat (BISS) transistor
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm2 collector mounting
pad.
[3]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm2 collector mounting
pad.
6.
Thermal characteristics
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm2 collector mounting
pad.
[3]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm2 collector mounting
pad.
Tj
junction temperature
-
150
°C
Tamb
operating ambient
temperature
−65
+150
°C
Tstg
storage temperature
+150
°C
(1) 1cm2 collector mounting pad
(2) Standard footprint
Fig 1.
Power derating curves
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Tamb (°C)
0
160
120
40
80
001aaa796
200
400
600
Ptot
(mW)
0
(1)
(2)
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
[1] 431
K/W
[2] 260
K/W
[3] 200
K/W
Rth(j-s)
thermal resistance from junction
to soldering point
in free air
[1] 85
K/W


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