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ENA1204A Datasheet(PDF) 1 Page - ON Semiconductor |
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ENA1204A Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 2 page 42814HK/73008TIIM TA-0858 RB No. A1204-1/2 http://onsemi.com Semiconductor Components Industries, LLC, 2014 April, 2014 DBD250G 25.0A Single-Phase Bridge Rectifier Features • Plastic molded structure • Glass passivation for high reliability • Peak reverse voltage : VRM=600V • Average output current : IO=25.0A Specifications Absolute Maximum Ratings at Tc=25°C Parameter Symbol Conditions Raitings Unit Peak Reverse Voltage VRM 600 V Average Output Current IO Ta =40°C 6.0 A Ta=40°C, With 300✕300✕3.0mm3 Cu fin 25.0 A Surge Forward Current IFSM 50Hz sine wave, 1cycle 400 A Junction Temperature Tj 150 °C Storage Temperature Tstg --40 to +150 °C Dilective Strength Voltage VIS Terminals tc case, AC 1 minute 2 kV Electrical Characteristics at Tc=25°C * Per Constituent element of bridge. Parameter Symbol Conditions Raitings Unit min typ max Forward Voltage VF IF= 12.5A* 1.05 V Reverse Current IR VR:At each VRM * 10 mA Thremal Resistance Rth(j-c) Junction-Case 1.5 °C / W Note) Maximum tightening torque : 0.98Nm Ordering number : ENA1204A Package Dimensions unit:mm(typ.) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3.4 32.0 MAX 2.5 MIN 7.95 23.0 MAX 11.0 10.0 9 1.5 14.4 1.65 2.4 4.9 |
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