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ENA1204A Datasheet(PDF) 1 Page - ON Semiconductor

Part # ENA1204A
Description  25.0A Single-Phase Bridge Rectifier
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ENA1204A Datasheet(HTML) 1 Page - ON Semiconductor

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42814HK/73008TIIM TA-0858 RB No. A1204-1/2
http://onsemi.com
Semiconductor Components Industries, LLC, 2014
April, 2014
DBD250G
25.0A Single-Phase Bridge Rectifier
Features
Plastic molded structure
Glass passivation for high reliability
Peak reverse voltage : VRM=600V
Average output current : IO=25.0A
Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter
Symbol
Conditions
Raitings
Unit
Peak Reverse Voltage
VRM
600
V
Average Output Current
IO
Ta
=40°C
6.0
A
Ta=40°C, With 300✕300✕3.0mm3 Cu fin
25.0
A
Surge Forward Current
IFSM
50Hz sine wave, 1cycle
400
A
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--40 to +150
°C
Dilective Strength Voltage
VIS
Terminals tc case, AC 1 minute
2
kV
Electrical Characteristics at Tc=25°C *
Per Constituent element of bridge.
Parameter
Symbol
Conditions
Raitings
Unit
min
typ
max
Forward Voltage
VF
IF=
12.5A*
1.05
V
Reverse Current
IR
VR:At each VRM
*
10
mA
Thremal Resistance
Rth(j-c)
Junction-Case
1.5
°C / W
Note) Maximum tightening torque : 0.98Nm
Ordering number : ENA1204A
Package Dimensions
unit:mm(typ.)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
3.4
32.0 MAX
2.5 MIN
7.95
23.0 MAX
11.0
10.0
9
1.5
14.4
1.65
2.4
4.9


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