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MC78LC30HT1G Datasheet(PDF) 3 Page - ON Semiconductor

Part # MC78LC30HT1G
Description  Micropower Voltage Regulator
Download  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC78LC30HT1G Datasheet(HTML) 3 Page - ON Semiconductor

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MC78LC00 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless otherwise noted.) (Note 5)
NTR SUFFIX
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (TA = 25°C, Iout = 1.0 mA)
1.5 V
1.8 V
2.5 V
2.7 V
2.8 V
3.0 V
3.3 V
4.0 V
5.0 V
Vout
1.455
1.746
2.425
2.646
2.744
2.94
3.234
3.9
4.90
1.5
1.8
2.5
2.7
2.8
3.0
3.3
4.0
5.0
1.545
1.854
2.575
2.754
2.856
3.06
3.366
4.1
5.10
V
Output Voltage (TA = −40°C to 85°C)
1.5 V
1.8 V
2.5 V
2.7 V
2.8 V
3.0 V
3.3 V
4.0 V
5.0 V
Vout
1.455
1.746
2.425
2.619
2.716
2.910
3.201
3.9
4.90
1.5
1.8
2.5
2.7
2.8
3.0
3.3
4.0
5.0
1.545
1.854
2.575
2.781
2.884
3.09
3.399
4.1
5.10
V
Line Regulation (Vin = VO(nom.) + 1.0 V to 12 V, Iout = 1.0 mA)
Regline
0.05
0.2
%/V
Load Regulation (Iout = 1.0 mA to 10 mA)
Regload
40
60
mV
Output Current (Note 6)
1.5 V, 1.8 V (Vin = 4.0 V)
2.5 V, 2.7 V, 2.8 V, 3.0 V (Vin = 5.0 V)
3.3 V (Vin = 6.0 V)
4.0 V (Vin = 7.0 V)
5.0 V (Vin = 8.0 V)
Iout
35
50
50
80
80
50
80
80
80
100
mA
Dropout Voltage (Iout = 1.0 mA, Measured at Vout −3.0%)
1.5 V
1.6 V−3.2 V
3.3 V−3.9 V
4.0 V−5.0 V
Vin−Vout
35
30
30
30
70
60
53
38
mV
Quiescent Current (Iout = 1.0 mA to IO(nom.))
IQ
1.1
3.6
mA
Output Voltage Temperature Coefficient
Tc
"100
ppm/°C
Output Noise Voltage (f = 1.0 kHz to 100 kHz)
Vn
89
mVrms
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015
Machine Model Method 200 V
2. Latch up capability (85°C) "100 mA
3. Maximum package power dissipation limits must be observed.
PD +
TJ(max) * TA
RqJA
4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
6. Output Current is measured when Vout = VO1 − 3% where VO1 = Vout at Iout = 0 mA.


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