MR851RLG datasheet(2/4 Pages) ONSEMI

Part #	MR851RLG

Description	Axial Lead Fast Recovery Rectifiers

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Manufacturer	ONSEMI [ON Semiconductor]

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MR850, MR851, MR852, MR854, MR856

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MAXIMUM RATINGS

Rating

Symbol

MR850

MR851

MR852

MR854

MR856

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

50

100

200

400

600

V

Non−Repetitive Peak Reverse Voltage

VRSM

75

150

250

450

650

V

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

V

Average Rectified Forward Current

(Single phase resistive load, TA = 80°C)

IO

3.0

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions)

IFSM

100

(one cycle)

A

Operating and Storage Junction Temperature Range

TJ, Tstg

− 65 to +125

− 65 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient (Note 1)

RqJA

28

°C/W

Thermal Resistance, Junction−to−Lead (Note 1)

RqJL

5.5

°C/W

1. Mounted with minimum recommended pad size, PC board FR−4.

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

Forward Voltage

(IF = 3.0 A, TJ = 25°C)

VF

−

1.04

1.25

V

Reverse Current (rated DC voltage) TJ = 25°C

MR850

MR851

MR852

MR854

MR856

TJ = 80°C

IR

−

2.0

−

60

−

100

10

150

200

250

300

mA

REVERSE RECOVERY CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Recovery Time

(IF = 1.0 A to VR = 30 Vdc)

(IF = 15 A, di/dt = 10 A/ms)

trr

−

100

150

200

300

ns

Reverse Recovery Current

(IF = 1.0 A to VR = 30 Vdc)

IRM(REC)

−

2.0

A

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