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MUR110 Datasheet(PDF) 2 Page - ON Semiconductor |
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MUR110 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page MUR120 Series http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol MUR Unit 105 110 115 120 130 140 160 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V Average Rectified Forward Current (Square Wave Mounting Method #3 Per Note 2) IF(AV) 1.0 @ TA = 130°C 1.0 @ TA = 120°C A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 35 A Operating Junction Temperature and Storage Temperature TJ, Tstg *65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Maximum Thermal Resistance, Junction−to−Ambient RqJA Note 2 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 Amp, TJ = 150°C) (iF = 1.0 Amp, TJ = 25°C) vF 0.710 0.875 1.05 1.25 V Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TJ = 150°C) (Rated DC Voltage, TJ = 25°C) iR 50 2.0 150 5.0 mA Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A) trr 35 25 75 50 ns Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/ms, IREC to 1.0 V) tfr 25 50 ns Typical Peak Reverse Recovery Current (IF = 1.0 A, di/dt = 50 A/ms) IRM 0.85 A 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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