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MUR115G Datasheet(PDF) 2 Page - ON Semiconductor

Part # MUR115G
Description  SWITCHMODE Power Rectifiers
Download  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MUR115G Datasheet(HTML) 2 Page - ON Semiconductor

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MUR120 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MUR
Unit
105
110
115
120
130
140
160
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
150
200
300
400
600
V
Average Rectified Forward Current
(Square Wave Mounting Method #3 Per Note 2)
IF(AV)
1.0 @ TA = 130°C
1.0 @ TA = 120°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
IFSM
35
A
Operating Junction Temperature and Storage Temperature
TJ, Tstg
*65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Thermal Resistance, Junction−to−Ambient
RqJA
Note 2
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 Amp, TJ = 150°C)
(iF = 1.0 Amp, TJ = 25°C)
vF
0.710
0.875
1.05
1.25
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ = 150°C)
(Rated DC Voltage, TJ = 25°C)
iR
50
2.0
150
5.0
mA
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
trr
35
25
75
50
ns
Maximum Forward Recovery Time
(IF = 1.0 A, di/dt = 100 A/ms, IREC to 1.0 V)
tfr
25
50
ns
Typical Peak Reverse Recovery Current
(IF = 1.0 A, di/dt = 50 A/ms)
IRM
0.85
A
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.


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