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MURA260T3G Datasheet(PDF) 2 Page - ON Semiconductor

Part # MURA260T3G
Description  Surface Mount Ultrafast Power Rectifier
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MURA260T3G Datasheet(HTML) 2 Page - ON Semiconductor

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MURA260T3G, SURA8260T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
600
V
Average Rectified Forward Current
@ TL = 145C
@ TL = 110C
IF(AV)
1.0
2.0
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
30
A
Operating Junction Temperature Range
TJ
−65 to +175
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (TL = 25C) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
PsiJL
(Note 2)
RqJA
24
216
C/W
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by RqJL) are now referenced as PsiJL.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 2.0 A, TJ = 25C)
(iF = 2.0 A, TJ = 150C)
vF
1.45
1.20
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, TJ = 25C)
(Rated DC Voltage, TJ = 150C)
iR
5.0
150
mA
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
trr
75
ns
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.


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