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SUR81560G Datasheet(PDF) 2 Page - ON Semiconductor |
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SUR81560G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page MUR1510G, MUR1515G, MUR1520G, MUR1540G, MUR1560G, MURF1560G, SUR81520G, SUR81560G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol MUR/SUR8 Unit 1510 1515 1520 1540 1560 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 150 200 400 600 V Average Rectified Forward Current (Rated VR) IF(AV) 15 @ TC = 150°C 15 @ TC = 145°C A Peak Rectified Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 30 @ TC = 150°C 30 @ TC = 145°C A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 200 150 A Operating Junction Temperature and Storage Temperature Range TJ, Tstg −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit MUR1510 Series: Thermal Resistance Junction−to−Case Junction−to−Ambient RqJC RqJA 1.5 73 °C/W MURF1560: Thermal Resistance Junction−to−Case Junction−to−Ambient RqJC RqJA 4.25 75 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol 1510 1515 1520 1540 1560 Unit Maximum Instantaneous Forward Voltage (Note 1) (iF = 15 A, TC = 150°C) (iF = 15 A, TC = 25°C) vF 0.85 1.05 1.12 1.25 1.20 1.50 V Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TC = 150°C) (Rated DC Voltage, TC = 25°C) iR 500 10 500 10 1000 10 mA Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) trr 35 60 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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