PEMB20_PUMB20_15 datasheet(4/11 Pages) PHILIPS

Part #	PEMB20_PUMB20

Description	PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

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Manufacturer	PHILIPS [NXP Semiconductors]

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4 / 11 page

PEMB20_PUMB20_3

Product data sheet

Rev. 03 — 1 September 2009

4 of 11

NXP Semiconductors

PEMB20; PUMB20

PNP/PNP resistor-equipped transistors; R1 = 2.2 k

Ω, R2 = 2.2 kΩ

7.

Characteristics

Table 8.

Characteristics

Tamb = 25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB = −50 V; IE = 0 A

-

−100

nA

ICEO

collector-emitter

cut-off current

VCE = −30 V; IB = 0 A

-

−1

µA

VCE = −30 V; IB = 0 A;

Tj = 150 °C

--

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC = 0 A

-

−2mA

hFE

DC current gain

VCE = −5 V; IC = −20 mA

30

-

VCEsat

collector-emitter

saturation voltage

IC = −10 mA; IB = −0.5 mA

-

−150

mV

VI(off)

off-state input voltage

VCE = −5 V; IC = −1 mA

-

−1.2

−0.5

V

VI(on)

on-state input voltage

VCE = −0.3 V; IC = −20 mA

−2

−1.6

-

V

R1

bias resistor 1 (input)

1.54

2.2

2.86

k

Ω

R2/R1

bias resistor ratio

0.8

1

1.2

Cc

collector capacitance

VCB = −10 V; IE = ie = 0 A;

f=1MHz

--3

pF

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