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PEMH11_PUMH11 Datasheet(PDF) 6 Page - NXP Semiconductors |
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PEMH11_PUMH11 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 — 29 November 2011 6 of 14 NXP Semiconductors PEMH11; PUMH11 NPN/NPN resistor-equipped transistors; R1 = 10 k , R2 = 10 k 7. Characteristics [1] Characteristics of built-in transistor. Table 8. Characteristics Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off current VCB =50V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE =30V; IB = 0 A --1 A VCE =30V; IB =0A; Tj = 150 C --5 A IEBO emitter-base cut-off current VEB =5V; IC = 0 A - - 400 A hFE DC current gain VCE =5V; IC =5mA 30 - - VCEsat collector-emitter saturation voltage IC =10mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE =5V; IC =100 A- 1.1 0.8 V VI(on) on-state input voltage VCE = 0.3 V; IC =10mA 2.5 1.8 - V R1 bias resistor 1 (input) 7 10 13 k R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance VCB =10V; IE =ie =0A; f= 1MHz --2.5 pF fT transition frequency VCB =5V; IC =10 mA; f = 100 MHz [1] - 230 - MHz |
Similar Part No. - PEMH11_PUMH11_15 |
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Similar Description - PEMH11_PUMH11_15 |
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