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PEMH16_PUMH16 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PEMH16_PUMH16 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 9 page PEMH16_PUMH16_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 15 November 2009 4 of 9 NXP Semiconductors PEMH16; PUMH16 NPN/NPN resistor-equipped transistors; R1 = 22 k Ω, R2 = 47 kΩ 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air SOT363 [1] -- 625 K/W SOT666 [1][2] -- 625 K/W Per device Rth(j-a) thermal resistance from junction to ambient in free air SOT363 [1] -- 416 K/W SOT666 [1][2] -- 416 K/W Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off current VCB =50V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE =30V; IB =0 A - - 1 μA VCE =30V; IB =0 A; Tj = 150 °C -- 50 μA IEBO emitter-base cut-off current VEB =5V; IC = 0 A - - 120 μA hFE DC current gain VCE =5V; IC =5mA 80 - - VCEsat collector-emitter saturation voltage IC =10mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE =5V; IC =100 μA- 0.8 0.5 V VI(on) on-state input voltage VCE =0.3 V; IC =2mA 2 1.1 - V R1 bias resistor 1 (input) 15.4 22 28.6 k Ω R2/R1 bias resistor ratio 1.7 2.1 2.6 Cc collector capacitance VCB =10V; IE =ie =0A; f= 1MHz -- 2.5 pF |
Similar Part No. - PEMH16_PUMH16_15 |
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Similar Description - PEMH16_PUMH16_15 |
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