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IRFZ48NSPBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRFZ48NSPBF
Description  ADVANCED PROCESS TECHNOLOGY
Download  11 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFZ48NSPBF Datasheet(HTML) 1 Page - International Rectifier

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IRFZ48NSPbF
IRFZ48NLPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ48NS)
l Low-profilethrough-hole(IRFZ48NL)
l 175°COperatingTemperature
l Fast Switching
l Fully Avalanche Rated
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRFZ48NL) is available for low-
profileapplications.
Description
VDSS = 55V
RDS(on) = 0.014Ω
ID = 64A
2
D Pak
TO-262
S
D
G
3/18/04
Parameter
Typ.
Max.
Units
RqJC
Junction-to-Case
–––
1.15
RqJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
Thermal Resistance
°C/W
Absolute Maximum Ratings
www.irf.com
1
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
64
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
45
A
IDM
Pulsed Drain Current

210
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
130
W
Linear Derating Factor
0.83
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

32
A
EAR
Repetitive Avalanche Energy

13
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
PD - 95125
l Lead-Free


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