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NCP160BFCT500T2G Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCP160BFCT500T2G
Description  250 mA, Ultra-Low Noise and High PSRR LDO Regulator for RF and Analog Circuits
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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NCP160
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS −40
°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise
noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4).
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Operating Input Voltage
VIN
1.9
5.5
V
Output Voltage Accuracy
VIN = VOUT(NOM) + 1 V
0 mA
≤ IOUT ≤ 250 mA
VOUT
−2
+2
%
Line Regulation
VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V
LineReg
0.02
%/V
Load Regulation
IOUT = 1 mA to 250 mA
LoadReg
0.001
%/mA
Dropout Voltage (Note 5)
IOUT = 250 mA
VOUT(NOM) = 1.8 V
VDO
180
250
mV
VOUT(NOM) = 2.5 V
110
175
VOUT(NOM) = 2.8 V
95
160
VOUT(NOM) = 2.85 V
95
160
VOUT(NOM) = 3.0 V
90
155
VOUT(NOM) = 3.3 V
80
145
VOUT(NOM) = 3.5 V
75
140
VOUT(NOM) = 4.5 V
65
120
VOUT(NOM) = 5.0 V
75
105
VOUT(NOM) = 5.14 V
60
105
Output Current Limit
VOUT = 90% VOUT(NOM)
ICL
250
700
mA
Short Circuit Current
VOUT = 0 V
ISC
690
Quiescent Current
IOUT = 0 mA
IQ
18
23
mA
Shutdown Current
VEN ≤ 0.4 V, VIN = 4.8 V
IDIS
0.01
1
mA
EN Pin Threshold Voltage
EN Input Voltage “H”
VENH
1.2
V
EN Input Voltage “L”
VENL
0.4
EN Pull Down Current
VEN = 4.8 V
IEN
0.2
0.5
mA
Turn−On Time
COUT = 1 mF, From assertion of VEN to
VOUT = 95% VOUT(NOM)
120
ms
Power Supply Rejection Ratio
IOUT = 20 mA
f = 100 Hz
f = 1 kHz
f = 10 kHz
f = 100 kHz
PSRR
91
98
82
48
dB
Output Voltage Noise
f = 10 Hz to 100 kHz
IOUT = 1 mA
IOUT = 250 mA
VN
14
10
mVRMS
Thermal Shutdown Threshold
Temperature rising
TSDH
160
°C
Temperature falling
TSDL
140
°C
Active Output Discharge Resistance
VEN < 0.4 V, Version A only
RDIS
280
W
Line Transient (Note 6)
VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) +
1.6 V) in 30
ms, IOUT = 1 mA
TranLINE
−1
mV
VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) +
1 V) in 30
ms, IOUT = 1 mA
+1
Load Transient (Note 6)
IOUT = 1 mA to 200 mA in 10 ms
TranLOAD
−40
mV
IOUT = 200 mA to 1mA in 10 ms
+40
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM).
6. Guaranteed by design.


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