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IRG4BC20W-SPBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRG4BC20W-SPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC20W-SPBF Datasheet(HTML) 2 Page - International Rectifier

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IRG4BC20W-SPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
26
38
IC = 6.5A
Qge
Gate - Emitter Charge (turn-on)
3.7
5.5
nC
VCC = 400V
See Fig.8
Qgc
Gate - Collector Charge (turn-on)
10
15
VGE = 15V
td(on)
Turn-On Delay Time
22
tr
Rise Time
14
TJ = 25°C
td(off)
Turn-Off Delay Time
110
160
IC = 6.5A, VCC = 480V
tf
Fall Time
64
96
VGE = 15V, RG = 50Ω
Eon
Turn-On Switching Loss
0.06
Energy losses include "tail"
Eoff
Turn-Off Switching Loss
0.08
mJ
See Fig. 9, 10, 14
Ets
Total Switching Loss
0.14
0.2
td(on)
Turn-On Delay Time
21
TJ = 150°C,
tr
Rise Time
15
IC = 6.5A, VCC = 480V
td(off)
Turn-Off Delay Time
150
VGE = 15V, RG = 50Ω
tf
Fall Time
150
Energy losses include "tail"
Ets
Total Switching Loss
0.34
mJ
See Fig. 10, 11, 14
LE
Internal Emitter Inductance
7.5
nH
Measured 5mm from package
Cies
Input Capacitance
490
VGE = 0V
Coes
Output Capacitance
38
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
8.8
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
„
18
V
VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.48
V/°C VGE = 0V, IC = 1.0mA
2.16
2.6
IC = 6.5A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
2.55
IC = 13A
See Fig.2, 5
2.05
IC = 6.5A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-8.8
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
…
5.5
8.3
S
VCE = 100 V, IC = 6.5A
250
VGE = 0V, VCE = 600V
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See Fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.


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