Manufacturer | Part # | Datasheet | Description |
International Rectifier |
IRG4BC30FD1
|
361Kb / 10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4BC30FD1PBF
|
415Kb / 10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4BC30FD-S
|
1Mb / 11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4BC30FD-SPBF
|
1Mb / 12P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4PSH71UD
|
326Kb / 10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH
|
IRGB4B60KD1
|
376Kb / 15P |
INSULATED GATE BIPOLAR TRANSISTOR WITH
|
Motorola, Inc |
MGY20N120D
|
254Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
ON Semiconductor |
MGY20N120D
|
171Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
REV 1 |
Motorola, Inc |
MGW12N120D
|
250Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
ON Semiconductor |
MGW12N120D
|
168Kb / 6P |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
1998 REV 2 |