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IRG4BC30UPBF Datasheet(PDF) 5 Page - International Rectifier

Part # IRG4BC30UPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC30UPBF Datasheet(HTML) 5 Page - International Rectifier

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IRG4BC30UPbF
www.irf.com
5
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-EmitterVoltage
Fig. 7 - Typical Capacitance vs.
Collector-to-EmitterVoltage
0
400
800
1200
1600
2000
1
10
100
CE
V
, Collector-to-Emitter Voltage (V)
A
V
= 0V,
f = 1MHz
C
= C
+ C
, C
SHORTED
C
= C
C
= C
+ C
GE
ies
ge
gc
ce
res
gc
oes
ce
gc
Cies
Cres
Coes
0
4
8
12
16
20
0
1020
304050
g
Q , Total Gate Charge (nC)
A
V
= 400V
I
= 12A
CE
C
0.2
0.3
0.4
0.5
0
1020
30405060
G
R , Gate Resistance (Ω)
A
V
= 480V
V
= 15V
T
= 25°C
I
= 12A
CC
GE
J
C
0.1
1
10
-60
-40 -20
0
20
40
60
80
100 120 140 160
A
I = 6.0A
I = 12A
I = 24A
R
= 23 Ω
V
= 15V
V
= 480V
C
C
C
J
T , Junction Temperature (°C)
G
GE
CC


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