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NCV8715MX33TBG Datasheet(PDF) 7 Page - ON Semiconductor |
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NCV8715MX33TBG Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 20 page NCV8715 www.onsemi.com 7 ELECTRICAL CHARACTERISTICS − Voltage Version 2.5 V −40 °C ≤ TJ ≤ 125°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 19) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage 0 < IOUT < 50 mA VIN 3.5 24 V Output Voltage Accuracy 3.5 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 2.45 2.5 2.55 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 3 10 mV Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 15 mV Dropout Voltage (Note 17) VDO = VIN – (VOUT(NOM) – 125 mV) IOUT = 50 mA VDO 260 450 mV Maximum Output Current (Note 20) IOUT 100 200 mA Ground Current 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 5.8 mA Power Supply Rejection Ratio VIN = 3.5 V, VOUT = 2.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz PSRR 60 dB Output Noise Voltage VOUT = 2.5 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 115 mVrms Thermal Shutdown Temperature (Note 18) Temperature increasing from TJ = +25 °C TSD 170 °C Thermal Shutdown Hysteresis (Note 18) Temperature falling from TSD TSDH − 15 − °C 17. Characterized when VOUT falls 125 mV below the regulated voltage and only for devices with VOUT = 2.5 V. 18. Guaranteed by design and characterization. 19. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 20. Respect SOA. |
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